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MAAM71200-H1 Dataheets PDF



Part Number MAAM71200-H1
Manufacturers MA-COM
Logo MA-COM
Description Low Noise GaAs MMIC Power Amplifier
Datasheet MAAM71200-H1 DatasheetMAAM71200-H1 Datasheet (PDF)

MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Features  Noise Figure: 2.7 dB Typical  Gain: 15.5 dB Typical  Single Bias Supply  Low Current Consumption  DC Decoupled RF Input and Output  Ceramic Package Description The MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package. The MAAM71200-H1 is a packaged version of The MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 Ω without the need for exte.

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MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Features  Noise Figure: 2.7 dB Typical  Gain: 15.5 dB Typical  Single Bias Supply  Low Current Consumption  DC Decoupled RF Input and Output  Ceramic Package Description The MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package. The MAAM71200-H1 is a packaged version of The MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 Ω without the need for external components. The MAAM71200-H1 is ideally suited for microstrip assemblies where wire or ribbon bonds are used for interconnects. Typical applications include radar, EW and communication systems. The MAAM71200-H1 is fabricated using a mature 0.5-micron gate length GaAs process for increased reliability and performance repeatability. Ordering Information Part Number MAAM71200-H1 Package Bulk Packaging Functional Diagram VDD 2 Rev. V7 3 RF IN 1 RF OUT 4 65 1. Case must be electrically connected to RF and DC ground. 2. The RF bond inductance from the transmission line to the package is assumed to be 0.25 nH. Variations in bond inductance will result in variations in VSWR and gain slope. A small capacitive stub may be needed depending on the inductance realized in the final assembly. 3. Nominal bias is obtained by setting VDD = 4 V. 4. Increasing VDD from 4 volts to 6 volts increases output power and high frequency bandwidth. Absolute Maximum Ratings 5,6 Parameter Absolute Maximum Input Power +20 dBm VDD Junction Temperature +7 V +150°C Thermal Resistance +175°C/W Storage Temperature -65°C to +150°C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. M/A-COM Technology does not recommend sustained operation near these survivability limits. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Electrical Specifications: TA = 25°C, VDD = 4 V Parameter Gain Noise Figure Input VSWR Output VSWR Output 1 dB Compression Point Third Order Intercept Point Reverse Isolation Bias Current (IDD) Test Conditions — — — — — — — — Rev. V7 Units dB dB Ratio Ratio dBm dBm dB mA Min. 14.5 — — — — — — — Typ. 15.5 2.7 2.0:1 1.8:1 11 21 30 40 Max. — 3.5 — — — — — 55 Typical Performance Curves Gain 20 18 +25 C -50 C +100 C 16 14 12 Noise Figure 5 4 3 2 +25 C -50 C +100 C 10 7 8 9 10 11 12 13 Frequency (GHz) Input and Output VSWR 4.0 3.5 INPUT OUTPUT 3.0 2.5 2.0 1.5 1 7 8 9 10 11 12 Frequency (GHz) Output Power @ 1 dB Compression 15 13 13 11 9 7 1.0 7 8 9 10 11 12 13 Frequency (GHz) 2 5 7 8 9 10 11 12 13 Frequency (GHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz CR-16 Rev. V7 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Rev. V7 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THE.


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