MAAM71200-H1

MAAM71200-H1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Features  Noise Figure: 2.7 dB Typical  Gain: 15.5 dB Typical  Single Bias Supply  Low Current Consumption  DC Decoupled RF Input and Output  Ceramic Package Description The MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package. The MAAM71200-H1 is a packaged version of The MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 Ω without the need for external components. The MAAM71200-H1 is ideally suited for microstrip assemblies where wire or ribbon bonds are used for interconnects. Typical applications include radar, EW and communication systems. The MAAM71200-H1 is fabricated using a mature 0.5-micron gate length GaAs process for increased reliability and performance repeatability. Ordering Information Part Number MAAM71200-H1 Package Bulk Packaging Functional Diagram VDD 2 Rev. V7 3 RF IN 1 RF OUT 4 65 1. Case must be electrically connected to RF and DC ground. 2. The RF bond inductance from the transmission line to the package is assumed to be 0.25 nH. Variations in bond inductance will result in variations in VSWR and gain slope. A small capacitive stub may be needed depending on the inductance realized in the final assembly. 3. Nominal bias is obtained by setting VDD = 4 V. 4. Increasing VDD from 4 volts to 6 volts increases output power and high frequency bandwidth. Absolute Maximum Ratings 5,6 Parameter Absolute Max...