Power MOSFET
E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simpl...
Description
E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements
VDSS = 60V ID25 = 50A RDS(ON) = 0.022
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 50* 36 200 140 1.0 ±20 100 4.5
55 to +175
300(1.6mm from case) 10 Ibf in(1.1N m)
Pin1–Gate Pin2–Drain Pin3–Source
Units
A
W W/ ْC
V mJ V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA Junction-to-Ambient
62
Units ْC/W
1
E 50N06
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
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