MDP9N60

MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID =9.0A  RDS(ON) ≤ 0.75Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 600 660 ±30 9.0 5.7 36 150 1.2 15 4.5 480 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec. 2014 Version 2.2 1 Symbol RθJA RθJC Rating 62.5 0.83 Unit oC/W MagnaChip Semiconductor Ltd. MDP9N60 N-channel MOSFET 600V Ordering Information Part Number MDP9N60TH Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC...