Document
MDP9N60 N-channel MOSFET 600V
MDP9N60
N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID =9.0A RDS(ON) ≤ 0.75Ω
Applications
@ VGS = 10V @ VGS = 10V
Power Supply
PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage
Characteristics
Continuous Drain Current (※) Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR Dv/dt EAS TJ, Tstg
Rating 600 660 ±30 9.0 5.7 36 150 1.2 15 4.5 480
-55~150
Unit V V V A A A
W W/ oC
mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Dec. 2014 Version 2.2
1
Symbol RθJA RθJC
Rating 62.5 0.83
Unit oC/W
MagnaChip Semiconductor Ltd.
MDP9N60 N-channel MOSFET 600V
Ordering Information
Part Number MDP9N60TH
Temp. Range -55~150oC
Package TO-220
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics
BVDSS VGS(th) IDSS IGSS RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS VSD trr Qrr
Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A
VDS = 480V, ID = 9.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 9.0A, RG = 25Ω(3)
IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/μs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=10.8mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
600 3.0 -
--
V
5.0
1 μA
- - 100 nA
0.65 0.75
Ω
- 7.0 - S
- 27 - 8.2 - 10.7 - 1160 - 6.2 - 134 - 31 - 59 - 48 - 30
nC pF Ns
- 9.0 - A
- 1.4 V
- 360 - 3.9
ns μC
Dec. 2014 Version 2.2
2 MagnaChip Semiconductor Ltd.
ID,Drain Current [A]
MDP9N60 N-channel MOSFET 600V
20
V =5.5V gs =6.0V
=6.5V
Notes 1. 250㎲ Pulse Test 2. TC=25℃
=7.0V 15 =8.0V
=10.0V
=15.0V
10
5
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. ID = 4.5 A
2.0
1.5
1.0
0.5
0.0 -100
-50 0
50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
200
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON)R [Ω ]
1.5
VGS=10.0V 1.0
VGS=20V
0.5 0 5 10 15 20
ID,Drain Current [A]
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
25
1.2
※ Notes : 1. VGS = 0 V 2. 250 s Pulse Test
1.1
1.0
0.9
0.8 -50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
IDR Reverse Drain Current [A]
* Notes ; 1. VDS=30V
10
150℃ 25℃
-55℃
1
※ Notes :
1. V = 0 V GS
2. ID = 250㎂ 10
150℃
25℃
1
ID [A]
0.1 2468
VGS [V]
Fig.5 Transfer Characteristics
10
0.1 0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
1.4
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Dec. 2014 Version 2.2
3 MagnaChip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDP9N60 N-channel MOSFET 600V
10 ※ Note : ID = 9A 8 6
120V 300V 480V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Q , Total Gate Charge [nC] G
Fig.7 Gate Charge Characteristics
102
Operation in This Area is Limited by R DS(on)
10 s
100 s 101 1 ms
10 ms DC
100 ms
100
10-1 Single Pulse TJ=Max rated T =25℃
C
10-2 10-1 100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Capacitance [pF]
ID, Drain Current [A]
2000
C oss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
1500 1000
500
Ciss C
rss
※ Notes ;
1. V = 0 V GS
2. f = 1 MHz
0 1
10
V , Drain-Source Vol.