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MDP9N60 Dataheets PDF



Part Number MDP9N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP9N60 DatasheetMDP9N60 Datasheet (PDF)

MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID =9.0A  RDS(ON) ≤ 0.75Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching Abso.

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MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID =9.0A  RDS(ON) ≤ 0.75Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 600 660 ±30 9.0 5.7 36 150 1.2 15 4.5 480 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec. 2014 Version 2.2 1 Symbol RθJA RθJC Rating 62.5 0.83 Unit oC/W MagnaChip Semiconductor Ltd. MDP9N60 N-channel MOSFET 600V Ordering Information Part Number MDP9N60TH Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IS VSD trr Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A VDS = 480V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 9.0A, RG = 25Ω(3) IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=10.8mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C Min Typ Max Unit 600 3.0 - -- V 5.0 1 μA - - 100 nA 0.65 0.75 Ω - 7.0 - S - 27 - 8.2 - 10.7 - 1160 - 6.2 - 134 - 31 - 59 - 48 - 30 nC pF Ns - 9.0 - A - 1.4 V - 360 - 3.9 ns μC Dec. 2014 Version 2.2 2 MagnaChip Semiconductor Ltd. ID,Drain Current [A] MDP9N60 N-channel MOSFET 600V 20 V =5.5V gs =6.0V =6.5V Notes 1. 250㎲ Pulse Test 2. TC=25℃ =7.0V 15 =8.0V =10.0V =15.0V 10 5 5 10 15 VDS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics 20 3.0 ※ Notes : 1. V = 10 V 2.5 GS 2. ID = 4.5 A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature 200 BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON)R [Ω ] 1.5 VGS=10.0V 1.0 VGS=20V 0.5 0 5 10 15 20 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 25 1.2 ※ Notes : 1. VGS = 0 V 2. 250 s Pulse Test 1.1 1.0 0.9 0.8 -50 0 50 100 150 TJ, Junction Temperature [oC] 200 Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance IDR Reverse Drain Current [A] * Notes ; 1. VDS=30V 10 150℃ 25℃ -55℃ 1 ※ Notes : 1. V = 0 V GS 2. ID = 250㎂ 10 150℃ 25℃ 1 ID [A] 0.1 2468 VGS [V] Fig.5 Transfer Characteristics 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] 1.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Dec. 2014 Version 2.2 3 MagnaChip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDP9N60 N-channel MOSFET 600V 10 ※ Note : ID = 9A 8 6 120V 300V 480V 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Q , Total Gate Charge [nC] G Fig.7 Gate Charge Characteristics 102 Operation in This Area is Limited by R DS(on) 10 s 100 s 101 1 ms 10 ms DC 100 ms 100 10-1 Single Pulse TJ=Max rated T =25℃ C 10-2 10-1 100 101 102 VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Capacitance [pF] ID, Drain Current [A] 2000 C oss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 1000 500 Ciss C rss ※ Notes ; 1. V = 0 V GS 2. f = 1 MHz 0 1 10 V , Drain-Source Vol.


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