N-Channel MOSFET
MDP9N60 N-channel MOSFET 600V
MDP9N60
N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
The MDP9N60 uses advanced M...
Description
MDP9N60 N-channel MOSFET 600V
MDP9N60
N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
The MDP9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP9N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID =9.0A RDS(ON) ≤ 0.75Ω
Applications
@ VGS = 10V @ VGS = 10V
Power Supply
PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage
Characteristics
Continuous Drain Current (※) Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR Dv/dt EAS TJ, Tstg
Rating 600 660 ±30 9.0 5.7 36 150 1.2 15 4.5 480
-55~150
Unit V V V A A A
W W/ oC
mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Dec. 2014 Version 2.2
1
Symbol RθJA RθJC
Rating 62.5 0.83
Unit oC/W
MagnaChip Semiconductor Ltd.
MDP9N60 N-channel MOSFET 600V
Ordering Information
Part Number MDP9N60TH
Temp. Range -55~150oC
Package TO-220
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC...
Similar Datasheet