MDP9N50

MDP9N50 N-channel MOSFET 500V MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP9N50 is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) < 0.85Ω @VGS = 10V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 9.0 5.5 36 120 0.95 4.5 300 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 1.05 Unit oC/W Dec 2009. Version 1.1 1 MagnaChip Semiconductor Ltd. MDP9N50 N-channel MOSFET 500V Ordering Information Part Number MDP9N50TH Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance RDS(ON...