N-Channel MOSFET
MDP9N50 N-channel MOSFET 500V
MDP9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDP9N50 uses advance...
Description
MDP9N50 N-channel MOSFET 500V
MDP9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP9N50 is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) < 0.85Ω @VGS = 10V
Applications
Power Supply HID Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
Dv/dt EAS TJ, Tstg
Rating 500 ±30 9.0 5.5 36 120 0.95 4.5 300
-55~150
Unit V V A A A
W W/ oC
V/ns mJ oC
Symbol RθJA RθJC
Rating 62.5 1.05
Unit oC/W
Dec 2009. Version 1.1
1 MagnaChip Semiconductor Ltd.
MDP9N50 N-channel MOSFET 500V
Ordering Information
Part Number MDP9N50TH
Temp. Range -55~150oC
Package TO-220
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON...
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