MDP9N50BTH

MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDP/F9N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F9N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) ≤ 0.85Ω @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP9N50B MDF9N50B 500 ±30 9.0 9.0* 5.5 5.5* 36 36* 120 38 0.95 0.3 12 4.5 300 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011. Version 1.0 Symbol RθJA RθJC MDP9N50B 62.5 1.05 MDF9N50B 62.5 3.3 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V Ordering Information Part Number MDP9N50BTH MDF9N50BTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Cha...