Document
MDP9N50B / MDF9N50B N-channel MOSFET 500V
MDP9N50B / MDF9N50B
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDP/F9N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V
ID = 9.0A
@VGS = 10V
RDS(ON) ≤ 0.85Ω @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP9N50B MDF9N50B 500 ±30
9.0 9.0* 5.5 5.5* 36 36* 120 38 0.95 0.3
12 4.5 300 -55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol RθJA RθJC
MDP9N50B 62.5 1.05
MDF9N50B 62.5 3.3
Unit oC/W
1 MagnaChip Semiconductor Ltd.
MDP9N50B / MDF9N50B N-channel MOSFET 500V
Ordering Information
Part Number MDP9N50BTH MDF9N50BTH
Temp. Range -55~150oC -55~150oC
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen Free Halogen Free
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics
BVDSS VGS(th) IDSS IGSS RDS(ON)
gfs
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf
IS VSD trr Qrr
Test Condition
Min
ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A
500 2.0
-
-
VDS = 400V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25Ω(3)
-
IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3)
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C 4. L=6.7mH, IAS=9.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Typ
0.72 7
15.7 3.4 5.3 792 5.0 101 14.1 27.3 68 37.3
9.0
272 2.0
Max
4.0 1 100 0.85
-
-
1.4
Unit
V µA nA Ω S
nC
pF
ns
A V ns µC
Dec 2011. Version 1.0
2 MagnaChip Semiconductor Ltd.
ID,Drain Current [A]
MDP9N50B / MDF9N50B N-channel MOSFET 500V
20
V =5.0V gs =5.5V
16 =6.0V =6.5V =7.0V =8.0V =10.0V
12 =15.0V
8
Notes 1. 250㎲ Pulse Test 2. T =25℃
C
4
0 0 5 10 15 20
V ,Drain-Source Voltage [V] DS
Fig.1 On-Region Characteristics
25
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. I = 4.5A
D
2.0
1.5
1.0
0.5
0.0 -50
0 50 100
T , Junction Temperature [oC] J
150
Fig.3 On-Resistance Variation with Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
D S(O N )R [Ω ]
1.6
1.4
1.2
1.0
V =10V GS V =20V
0.8 GS
0.6
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5
I ,Drain Current [A]
D
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
20.0
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250㎂
1.1
1.0
0.9
0.8 -50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs. Temperature
R , (Normalized) DS(ON)
Drain-Source On-Resistance
ID(A )
* Notes ; 10 1. Vds=30V
150℃ 1
25℃ -55℃
0.1 3
45
V [V] GS
6
Fig.5 Transfer Characteristics
7
I
DR
Reverse Drain Current [A]
※ Notes : 1. V = 0 V
GS
2.250µs Pulse test 10
150℃
1
25℃
0.1 0.2
0.4 0.6 0.8 1.0
V , Source-Drain Voltage [V] SD
1.2
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Dec 2011. Version 1.0
3 MagnaChip Semiconductor Ltd.
V , Gate-Source Voltage [V] GS
MDP9N50B / MDF9N50B N-channel MOSFET 500V
10 ※ Note : I = 9.0A
D
8
6
100V 250V 400V
4
2
0 0 2 4 6 8 10 12
Q , Total Gate Charge [nC] G
Fig.7 Gate Charge Characteristics
14
16
102 Operation in This Area is Limited by R DS(on)
101
100
10 µs
100 µs 1 ms 10 ms 100 ms DC
10-1 10-2
10-1
Single Pulse TJ=Max rated TC=25℃
100 101 102
-VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area MDP9N50B (TO-220)
Capacitance [pF]
ID, Drain Current [A]
1400
C oss
1200 1000
C iss
800
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
※ Notes ; 1. V = 0.