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MDF9N50BTH Dataheets PDF



Part Number MDF9N50BTH
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF9N50BTH DatasheetMDF9N50BTH Datasheet (PDF)

MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDP/F9N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F9N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) ≤ 0.85Ω @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) D.

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MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDP/F9N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F9N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) ≤ 0.85Ω @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP9N50B MDF9N50B 500 ±30 9.0 9.0* 5.5 5.5* 36 36* 120 38 0.95 0.3 12 4.5 300 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011. Version 1.0 Symbol RθJA RθJC MDP9N50B 62.5 1.05 MDF9N50B 62.5 3.3 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V Ordering Information Part Number MDP9N50BTH MDF9N50BTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta = 25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf IS VSD trr Qrr Test Condition Min ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A 500 2.0 - - VDS = 400V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25Ω(3) - IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3) - Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C 4. L=6.7mH, IAS=9.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C Typ 0.72 7 15.7 3.4 5.3 792 5.0 101 14.1 27.3 68 37.3 9.0 272 2.0 Max 4.0 1 100 0.85 - - 1.4 Unit V µA nA Ω S nC pF ns A V ns µC Dec 2011. Version 1.0 2 MagnaChip Semiconductor Ltd. ID,Drain Current [A] MDP9N50B / MDF9N50B N-channel MOSFET 500V 20 V =5.0V gs =5.5V 16 =6.0V =6.5V =7.0V =8.0V =10.0V 12 =15.0V 8 Notes 1. 250㎲ Pulse Test 2. T =25℃ C 4 0 0 5 10 15 20 V ,Drain-Source Voltage [V] DS Fig.1 On-Region Characteristics 25 3.0 ※ Notes : 1. V = 10 V 2.5 GS 2. I = 4.5A D 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 T , Junction Temperature [oC] J 150 Fig.3 On-Resistance Variation with Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage D S(O N )R [Ω ] 1.6 1.4 1.2 1.0 V =10V GS V =20V 0.8 GS 0.6 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 I ,Drain Current [A] D Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 20.0 1.2 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 0 50 100 150 TJ, Junction Temperature [oC] 200 Fig.4 Breakdown Voltage Variation vs. Temperature R , (Normalized) DS(ON) Drain-Source On-Resistance ID(A ) * Notes ; 10 1. Vds=30V 150℃ 1 25℃ -55℃ 0.1 3 45 V [V] GS 6 Fig.5 Transfer Characteristics 7 I DR Reverse Drain Current [A] ※ Notes : 1. V = 0 V GS 2.250µs Pulse test 10 150℃ 1 25℃ 0.1 0.2 0.4 0.6 0.8 1.0 V , Source-Drain Voltage [V] SD 1.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Dec 2011. Version 1.0 3 MagnaChip Semiconductor Ltd. V , Gate-Source Voltage [V] GS MDP9N50B / MDF9N50B N-channel MOSFET 500V 10 ※ Note : I = 9.0A D 8 6 100V 250V 400V 4 2 0 0 2 4 6 8 10 12 Q , Total Gate Charge [nC] G Fig.7 Gate Charge Characteristics 14 16 102 Operation in This Area is Limited by R DS(on) 101 100 10 µs 100 µs 1 ms 10 ms 100 ms DC 10-1 10-2 10-1 Single Pulse TJ=Max rated TC=25℃ 100 101 102 -VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area MDP9N50B (TO-220) Capacitance [pF] ID, Drain Current [A] 1400 C oss 1200 1000 C iss 800 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd ※ Notes ; 1. V = 0.


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