polyfet rf devices
GX3442
General Description
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matchi...
polyfet rf devices
GX3442
General Description
Polyfet's GAN (on SiC) HEMT power
transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range.
RF POWER GAN
TRANSISTOR
120.0 Watts Single Ended
Package Style GX HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE ROHS COMPLIANT
Suitable for use across 1-2500Mhz
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Total Device Dissipation
160 Watts
Junction to Case Thermal
Resistance
o 1.80 C/W
Maximum Junction Temperature
200 oC
Storage Temperature
oo -65 C to 150 C
Drain to Source Voltage
180 V
Gate to Source Voltage
-10 V to + 2 V
RF CHARACTERISTICS ( 120.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Gps Common Source Power Gain
Drain Efficiency
11 55
dB Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz % Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
VSWR Load Mismatch Tolerance
10:1 Relative Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Bvdss Drain Breakdown Voltage
250
V Ids = 20.00mA, Vgs = -8V
Idsat
Saturation Current
17.00
Amp
Vgs = +2V, Vds = 10V
Idss Vgs Ciss Crss
Zero Bias Drain Current Gate Bias for Drain Current Common Source Input Capacitance Common Source Feedbac...