GX3442

polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range. RF POWER GAN TRANSISTOR 120.0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Suitable for use across 1-2500Mhz ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Total Device Dissipation 160 Watts Junction to Case Thermal Resistance o 1.80 C/W Maximum Junction Temperature 200 oC Storage Temperature oo -65 C to 150 C Drain to Source Voltage 180 V Gate to Source Voltage -10 V to + 2 V RF CHARACTERISTICS ( 120.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps Common Source Power Gain  Drain Efficiency 11 55 dB Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz % Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz VSWR Load Mismatch Tolerance 10:1 Relative Idq = 0.50 A, Vds = 48.0 V, F = 2,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Bvdss Drain Breakdown Voltage 250 V Ids = 20.00mA, Vgs = -8V Idsat Saturation Current 17.00 Amp Vgs = +2V, Vds = 10V Idss Vgs Ciss Crss Zero Bias Drain Current Gate Bias for Drain Current Common Source Input Capacitance Common Source Feedbac...