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ISL73096EH Dataheets PDF



Part Number ISL73096EH
Manufacturers Intersil
Logo Intersil
Description Radiation Hardened Ultra High Frequency NPN/PNP Transistor
Datasheet ISL73096EH DatasheetISL73096EH Datasheet (PDF)

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH d.

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Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhanced Low Dose Rate Sensitivity (ELDERS) product manufacturing flow. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to single event latch-up and the capability of highly reliable performance in a radiation environment. The high gain-bandwidth product and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. Features • Electrically screened to SMD # 5962-07218 • QML qualified per MIL-PRF-38535 requirements • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . . Bonded wafer dielectric isolation • NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ) • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ) • NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ) • PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ) • PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ) • PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ) • Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ) • Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ) • Complete isolation between transistors * Limit established by characterization. Related Literature Applications • AN1503, Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays • TID REPORT for the Radiation Hardened UHF NPN/PNP transistor array • High frequency amplifiers and mixers • High frequency converters • Synchronous detector BETA BETA 120 115 110 105 100 95 90 85 80 0 50 100 150 200 250 300 krad(Si) FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE (HDR) TO 300krads(Si) 75 70 65 60 55 50 45 40 0 50 100 150 200 250 300 krad(Si) FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE (HDR) TO 300krads(Si) June 27, 2014 FN6475.4 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH Typical Applications VCC + - R1 39kΩ C1 1nF RS 50Ω R2 100Ω C2 1nF R3 39kΩ Q5 R4 100Ω C3 1nF VO Q2 RL 50Ω +VS FIGURE 3. HIGH-GAIN, LOW-NOISE AMPLIFIER MADE FROM ISL73127 R1 2kΩ Q5 R2 15kΩ R4 100Ω + - VEE Q4 R3 1kΩ C2 1nF RS 50Ω RF 240Ω C1 1nF +VS L1 1µH VO C3 1nF Q2 RL 50Ω RE 5.1Ω FIGURE 4. WIDEBAND AMPLIFIER MADE FROM ISL73096 Submit Document Feedback 2 FN6475.4 June 27, 2014 ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH Ordering Information ORDERING SMD NUMBER PART NUMBER (Notes 1, 2) TEMP. RANGE (°C) PACKAGE (Pb-free) PKG. DWG. # 5962F0721804VXC ISL73096EHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721801VXC ISL73096RHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721801V9A ISL73096RHVX -55 to +125 DIE 5962F0721804V9A ISL73096EHVX -55 to +125 DIE 5962F0721805VXC ISL73127EHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721802VXC ISL73127RHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721802V9A ISL73127RHVX -55 to +125 DIE 5962F0721805V9A ISL73127EHVX -55 to +125 DIE 5962F0721806VXC ISL73128EHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721803VXC ISL73128RHVF -55 to +125 16 Ld FLATPACK K16.A 5962F0721803V9A ISL73128RHVX -55 to +125 DIE 5962F0721806V9A ISL73128EHVX -55 to +125 DIE ISL73096RHF/PROTO ISL73096RHF/PROTO -55 to +125 16 Ld FLATPACK K16.A ISL73096RHX/SAMPLE ISL73096RHX/SAMPLE -55 to +125 DIE ISL73127RHF/PROTO ISL73127RHF/PROTO -55 to +125 16 Ld FLATPACK K16.A ISL73127.


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