Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73...
Radiation Hardened Ultra High Frequency
NPN/
PNP Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar
transistor arrays. The ISL73096 consists of three
NPN transistors and two
PNP transistors on a common substrate. The ISL73127 consists of five
NPN transistors on a common substrate. The ISL73128 consists of five
PNP transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhanced Low Dose Rate Sensitivity (ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to single event latch-up and the capability of highly reliable performance in a radiation environment.
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the
NPN and
PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the
transistors for maximum application flexibility.
Features
Electrically screened to SMD # 5962-07218
QML qualified per MIL-PRF-38535 requirements
Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . ...