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CESD5V0D7 Dataheets PDF



Part Number CESD5V0D7
Manufacturers JCET
Logo JCET
Description ESD Protection Diode
Datasheet CESD5V0D7 DatasheetCESD5V0D7 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-723 Plastic-Encapsulate Diodes CESD5V0D7 ESD Protection Diode DESCRIPTION The CESD5V0D7 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at .

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-723 Plastic-Encapsulate Diodes CESD5V0D7 ESD Protection Diode DESCRIPTION The CESD5V0D7 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. SOD-723 + FEATURES z Stand−off Voltage: 3.3 V−12 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices Maximum Ratings @Ta=25℃ IEC61000−4−2(ESD) ESD Voltage Parameter Air Contact per human body model per machine model Symbol Limit ±30 ±30 16 400 Total Power Dissipation on FR-5 Board (Note 1) PD 100 Thermal Resistance Junction−to−Ambient RΘJA 1250 Lead Solder Temperature − Maximum (10 Second Duration) TL 260 Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Note 1. FR−5 = 1.0 x 0.75 x 0.62 in. Unit KV KV V mW ℃/W ℃ ℃ A,May,2011 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) Device* Device Marking VRWM (V) Max IR (μA) @ VRWM Max VBR (V) @ IT(Note 2) Min Max IT mA IPP(A) + Max VC (V) @Max I+ PP Max Ppk + (W) Max CESD3V3D7 E0 3.3 2.5 5.0 5.9 1.0 10.4 11.9 113 CESD5V0D7 E2 5.0 1.0 6.2 7.3 1.0 8.8 13.3 117 CESD12VD7 E3 12 1.0 13.5 15.6 1.0 5.4 23.7 128 *Other voltages available upon request. +Surge current waveform per Figure 1. Note 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. C (pF) Typ 80 65 30 A,May,2011 .


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