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CESD5V0D9 Dataheets PDF



Part Number CESD5V0D9
Manufacturers JCET
Logo JCET
Description ESD Protection Diode
Datasheet CESD5V0D9 DatasheetCESD5V0D9 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes CESD5V0D9 ESD PROTECTION DIODE DESCRIPTION The CESD5V0D9 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. SOD-923 FEATURES  Low Reverse Stand−off Voltage: 5.0 V  Low Leakage Current  Response Time is Typically < 1 ns  IEC61000−4−2 Level 4 ESD Protection  The.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes CESD5V0D9 ESD PROTECTION DIODE DESCRIPTION The CESD5V0D9 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. SOD-923 FEATURES  Low Reverse Stand−off Voltage: 5.0 V  Low Leakage Current  Response Time is Typically < 1 ns  IEC61000−4−2 Level 4 ESD Protection  These are Pb−Free Devices APPLICATIONS  Computers and peripherals  Communications systems  Audio and video equipment  High speed data lines  Parallel ports MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Limit Unit Electrostatic Discharge Voltage (IEC61000−4−2 )(note1) Air ±16 Contact ±16 per human body model VESD 20 kV per machine model 0.4 Total Power Dissipation on FR-5 Board (note 2) Thermal Resistance from Junction to Ambient PD RΘJA 100 1250 mW ℃/W Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ Note: 1.Device stressed with ten non-repetitive ESD pulses. 2. FR−5 = 1.0 x 0.75 x 0.62 in. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.Functional operation above the Recommended.Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A-1,Nov,2012 ELECTRICAL PARAMETER Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR IF VF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Forward Current Forward Voltage @ IF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ) Device(1) Device Marking VRWM (V) Max IR (μA) @ VRWM Max VBR (V) (2) @ IT=1mA Min Max VC(V) @IPP(3)=5 A Max CESD5V0D9 B 5 1 6 8 15 (1)Other voltages available upon request. (2)VBR is measured with a pulse test current IT at an ambient temperature of 25°C. (3) Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5. VF(V) @IF=10mA Max 0.9 C (pF) @VR=0,f=1MHz Typ 20 A-1,Nov,2012 .


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