Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-923 Plastic-Encapsulate Diodes
CESD5V0D9 ESD PROTECTION DIODE
DESCRIPTION The CESD5V0D9 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage,and fast response time provide best in class protection on designs that are exposed to ESD.
SOD-923
FEATURES Low Reverse Stand−off Voltage: 5.0 V Low Leakage Current Response Time is Typically < 1 ns IEC61000−4−2 Level 4 ESD Protection These are Pb−Free Devices APPLICATIONS Computers and peripherals Communications systems Audio and video equipment High speed data lines Parallel ports
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Electrostatic Discharge Voltage (IEC61000−4−2 )(note1)
Air
±16
Contact
±16
per human body model
VESD
20
kV
per machine model
0.4
Total Power Dissipation on FR-5 Board (note 2) Thermal Resistance from Junction to Ambient
PD RΘJA
100 1250
mW ℃/W
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 ℃
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg -55 ~ +150 ℃
Note: 1.Device stressed with ten non-repetitive ESD pulses.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.Functional operation
above the Recommended.Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
A-1,Nov,2012
ELECTRICAL PARAMETER
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP
VRWM IR IT VBR IF VF
Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Forward Current Forward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )
Device(1)
Device Marking
VRWM (V) Max
IR (μA) @ VRWM
Max
VBR (V) (2) @ IT=1mA Min Max
VC(V) @IPP(3)=5 A
Max
CESD5V0D9
B
5
1
6
8
15
(1)Other voltages available upon request.
(2)VBR is measured with a pulse test current IT at an ambient temperature of 25°C. (3) Non-repetitive current pulse 8/20s exponential decay waveform according to IEC 61000-4-5.
VF(V) @IF=10mA
Max 0.9
C (pF) @VR=0,f=1MHz
Typ 20
A-1,Nov,2012
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