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CESDBLC5V0D9 Dataheets PDF



Part Number CESDBLC5V0D9
Manufacturers JCET
Logo JCET
Description ESD Protection Diode
Datasheet CESDBLC5V0D9 DatasheetCESDBLC5V0D9 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes CESDBLC5V0D9 Bi-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible soluti.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes CESDBLC5V0D9 Bi-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. SOD-923 FEATURES  Bi-directional ESD protection of one line  Low capacitance: 12pF(Typ.)  Low reverse stand−off voltage: 5.0V  Low reverse clamping voltage  Low leakage current  Excellent package:0.8mm×0.6mm×0.38mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  PAD  Audio and video equipment  Cellular handsets and accessories MARKING  Subscriber identity module(SIM) card protection  Portable electronics  Other electronics equipments communi- cation systems H = Device code Front side www.cj-elec.com 1 C,May,2014 CHANGJIANG ELEC.TECH. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) CESDBLC5V0D9 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.4 50 5 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. Unit kV W A ℃ ℃ ℃ ESD standards compliance IEC61000-4-2 Standard Contact Discharge Level Test Voltage kV 12 24 36 48 Air Discharge Level Test Voltage kV 12 24 38 4 15 JESD22-A114-B Standard ESD Class 0 1A 1B 1C 2 3A 3B Human Body Discharge V 0~249 250~499 500~999 1000~1999 2000~3999 4000~7999 8000~15999 ESD pulse waveform according to IEC61000-4-2 8/20μs pulse waveform according to IEC 61000-4-5 www.cj-elec.com 2 C,May,2014 CHANGJIANG ELEC.TECH. ELECTRICAL PARAMETER CESDBLC5V0D9 Symbol VC IPP VBR IT IR VRWM Parameter Clamping Voltage @ IPP Peak Pulse Current Breakdown Voltage @ IT Test Current Reverse Leakage Current @ VRWM Reverse Standoff Voltage V-I characteristics for a Bi-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse stand off voltage Symbol VRWM(1) Test conditions Min Typ Max 5 Reverse leakage current IR VRWM=5V 0.1 Breakdown voltage Clamping voltage V(BR) VC(2) IT=1mA IPP=5A 5.8 7.8 10 Junction capacitance CJ VR=0V,f=1MH.


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