DF2S24UCT

ESD Protection Diodes Silicon Epitaxial Planar DF2S24UCT DF2S24UCT 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±8 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-05 1 2014-04-15 Rev.3.0 4. Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current VR: Reverse voltage IR: Reverse current VF: Forward voltage IF: Forward...