FMV30N60S1

FMV30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic ②Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Isolation Voltage Viso Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C. Characteristics 600 600 ±30 ±19 ±90 ±30 6.6 849.2 50 12 100 2.16 90 150 -55 to +150 2 Electrical Characteristics at TC=25°C (unless otherwise specified) Static Ratings Description Symbol Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) Zero Gate...