FMH47N60S1

FMH47N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-3P 15.5max 13 ± 0.2 10 ± 0.2 φ3.2± 0.1 1.5±0.2 4.5±0.2 5 ±0.1 1.5 3 ±0.2 19.5 ±0.2 14.5 ±0.2 1.6 +0.3 -0.1 2.2 +0.3 -0.1 5.45 ± 0.2 1.6 +0.3 -0.1 1.1 +0.2 -0.1 5.45 ± 0.2 PRE-SOLDER 0.5 +0.2 0 1.5 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-3P DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=7.6A, L=40.2mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-23.5A, -di/dt=80A/μs, VDD≤300V, Tch≤150°C. Note *5 : IF≤-23.5A, dV/dt=13kV/μs, VDD≤300V, Tch≤150°C. Characteristics 600 600 ±47 ±29.7 ±141 ±30 9.5 1267.4 50 13 80 2.5 390 150 -55 to +150 Electrical Characteristics at...