SD106WS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS SCHOTTKY BARRIER DIODE FEATURES Low turn-on voltage Fast switching Microminiature plastic package This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge Ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications MARKING: S21 SOD-323 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Non-repetitive peak reverse voltage Forward current Non-repetitive Forward Surge Current @t= 8.3ms Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature Symbol VRM IFM IFSM Ptot RөJA TJ TSTG Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Symbol VR Min 30 Forward voltage VF Reverse current Capacitance between terminals IR CT Limit 30 200 1 250 400 125 -55~+150 Typ Max Unit V 260 320 mV 420 490 550 5 µA 15 pF Unit V mA A mW ℃/W ℃ ℃ Conditions IR=100uA IF=2mA IF=15mA IF=100mA IF=200mA VR=30V VR=10V,f=1MHz www.cj-elec.com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 200 100 =100℃ T a =25℃ FORWARD CURRENT I (mA) F 30 10 T a 3 1 0.3 0.1 0.0 0.1 0.2 0.3 0.4 FORWARD VOLTAGE V (V) F 0.5 REVERSE CURRENT I (uA) R 1000 300 100 30 10 3 1 0.3 0.1 ...