N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP70SL250AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & ...
Description
Advanced Power Electronics Corp.
AP70SL250AI
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL250A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
VDS @ Tj,max. RDS(ON) ID
750V 0.25Ω
15A
G DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
+20 V 15 A 9.6 A 38 A
dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6
50 34.7 1.92 168 15
V/ns W W mJ V/ns
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case...
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