QPD0030

Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications QPD0030 45 W, DC to 4 GHz 48V GaN RF Power Transistor 20 Pin 3x4mm QFN Product Features Operating Frequency Range: DC to 4 GHz Operating Drain Voltage: 48 V Maximum Output Power (PSAT): 49 W Maximum Drain Efficiency: 72.5% Efficiency-Tuned P3dB Gain: 21.7 dB Surface Mount Plastic Overmold package Functional Block Diagram General Description The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier. Pin Configuration Pin No. 2, 3, 4, 5 12, 13, 14, 15 1, 6-11, 16-20 Backside Paddle Label RF IN, VG RF OUT, VD N/C RF/DC Ground The wide bandwidth of the QPD0030 makes it suitable for many differenct applications from DC to 4 GHz. QPD0030 can deliver PSAT of 49 W at 48 V operation. Lead-free and ROHS compliant. Ordering Information Part No. ECCN QPD0030 EAR99 Description 45W DC to 4 GHz Preliminary Datasheet: Rev 03-18-16 © 2016 TriQuint Semiconductor, Inc - 1 of 8 - Disclaimer: Subject to change without notice www.triquint.com / www.qorvo.com QPD0030 45 W, DC to 4 GHz 48V GaN RF Power ...