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TGA2239

TriQuint Semiconductor

35W GaN Power Amplifier

Applications  Satellite Communications  Data Link  Radar TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Product Fea...


TriQuint Semiconductor

TGA2239

File Download Download TGA2239 Datasheet


Description
Applications  Satellite Communications  Data Link  Radar TGA2239 13 – 15.5 GHz 35 W GaN Power Amplifier Product Features  Frequency Range: 13 – 15.5 GHz  PSAT: >45.5 dBm @ PIN = 21 dBm  PAE: >32% @ PIN = 21 dBm  Large Signal Gain: >24.5 dB  Small Signal Gain: 29.5 dB  Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical  Process Technology GaN-TQGaN15  Chip Dimensions: 5.00 x 6.65 x 0.10 mm  Performance Under CW Operation Functional Block Diagram 23 4 5 1 10 9 8 7 6 General Description TriQuint’s TGA2239 is a Ku-band, high power MMIC amplifier fabricated on TriQuint’s production 0.15um GaN on SiC process. The TGA2239 operates from 13 – 15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5dB of large signal gain and greater than 32% power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2239 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pad Configuration Pad No. 1 2, 10 3, 9 4, 8 5, 7 6 Symbol RF In VG1-2 VG3 VD1-2 VD3 RF Out Ordering Information Part TGA2239 ECCN Description 3A001.b.2.b 13 – 15.5 GHz 35W GaN Power Amplifi...




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