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TGA2590

TriQuint Semiconductor

30W GaN Power Amplifier

Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Fea...


TriQuint Semiconductor

TGA2590

File Download Download TGA2590 Datasheet


Description
Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  Output Power: > 45 dBm (PIN = 23 dBm)  PAE: > 25 % (PIN = 23 dBm)  Large Signal Gain: > 22.0 dB  VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.  Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm Functional Block Diagram General Description TriQuint’s TGA2590 is a wideband power amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2590 operates from 6 - 12GHz and provides greater than 30W of saturated output power with greater than 22 dB of large signal gain and greater than 25% power-added efficiency. The TGA2590 is fully matched to 50Ω with DC blocking caps at both RF ports allowing for simple system integration. The broadband performance supports electronic warfare and radar across defense and commercial markets. Pad Configuration 1 2, 14 3, 13 4, 12 5, 11 6, 10 7, 9 8 Pad No. Symbol RF In VG1 VG2 VD1 VD2 VG3 VD3 RF Out Lead-free and RoHS compliant. Evaluation boards are available upon request. The information contained on this data sheet is technical information as defined by 22 CFR 120.10 and is therefore US export controlled. Export or transfer contrary to US law is prohibited. Ordering Information Part ECCN Description TGA2590 3A001.b.2.b 6-12 GHz 30W PA Datasheet: Rev - 05-08-14 © 2014 TriQuint - 1 of 12 - Disclaimer: Subject to change without notice www.triquint.com Absolute Ma...




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