TQP0104

Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications Product Features Operating Frequency Range: DC to 4 GHz Output Power (PSAT): 30 W Drain Efficiency: 64% Linear Gain: 17 dB Package Dimensions: 3 x 4 x 0.85 mm TQP0104 30 W, DC to 4 GHz, GaN Power Transistor 20 Pin 3x4mm QFN Functional Block Diagram VG, RF In 1 VG, RF In 2 VG, RF In 3 VG, RF In 4 VG, RF In 5 VG, RF In 6 20 19 18 17 16 VD, RF Out 15 VD, RF Out 14 VD, RF Out 13 VD, RF Out 12 VD, RF Out 11 VD, RF Out 7 8 9 10 N/C N/C N/C N/C N/C N/C N/C N/C General Description The TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The TQP0104 can also be used as a driver in a macrocell base station power amplifier. Pin Configuration Pin No. 1-6 7-10, 17-20 11-16 Backside Paddle Label RF IN, VG N/C RF OUT, VD RF/DC GND The wide bandwidth of the TQP0104 makes it suitable for many different applications from DC to 4 GHz. TQP0104 can deliver PSAT of 30 W at 28 to 32 V operation. Lead-free and ROHS compliant. Ordering Information Part No. TQP0104 ECCN Description EAR99 30 W, DC to 4 GHz, GaN PA TQP0104-2.6-EVB EAR99 2.5-2.7 GHz Eval Board TQP0104-2.1-DOH EAR99 2.1 GHz...