Document
Green DMNH6042SK3
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
50mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V
ID Max TC = +25°C
25A 22A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Power Management Functions DC-DC Converters Backlighting
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6042SK3Q)
Mechanical Data
Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMNH6042SK3-13
Case TO252 (DPAK)
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6042S YYWW
= Manufacturer’s Marking H6042S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53)
DMNH6042SK3
Document number: DS37462 Rev. 2 - 2
1 of 7 www.diodes.com
May 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current (Note 8) L = 10mH
Avalanche Energy (Note 8) L = 10mH
TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
IDM IS IAS EAS
DMNH6042SK3
Value 60 ±20
25 17
40 25 3.5 65
Units V V
A
A A A mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range
Steady State t<10s
Steady State t<10s
Symbol PD
RθJA
PD
RθJA
RθJC TJ, TSTG
Value 2 73 36 3.5 43 21 3.2
-55 to +175
Units W
°C/W W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
Min
60 — —
1.0 — — —
— — — — — — — — — — — — — —
Typ
— — —
— 30 45 0.8
492 54 27 3.8 4.2 8.8 1.8 1.8 3.4 1.9 10.1 4.5 12.9 5.4
Max
— 1 ±100
3.0 50 65 1.2
— — — — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = 250μA µA VDS = 60V, VGS = 0V nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A V VGS = 0V, IS = 2.6A
pF
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz nC
nC nC VDS = 44V, ID = 5.2A
nC
ns
ns VGS = 10V, VDS = 30V, ns RG = 6Ω, ID = 1A
ns
ns nC
IF = 2.6A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to produc.