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DMNH6042SK3 Dataheets PDF



Part Number DMNH6042SK3
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMNH6042SK3 DatasheetDMNH6042SK3 Datasheet (PDF)

Green DMNH6042SK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 50mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V ID Max TC = +25°C 25A 22A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  Rated to +175°C – Ideal for High Am.

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Green DMNH6042SK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 50mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V ID Max TC = +25°C 25A 22A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low On-Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH6042SK3Q) Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.315 grams (Approximate) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMNH6042SK3-13 Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H6042S YYWW = Manufacturer’s Marking H6042S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) DMNH6042SK3 Document number: DS37462 Rev. 2 - 2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current (Note 8) L = 10mH Avalanche Energy (Note 8) L = 10mH TC = +25°C TC = +70°C Symbol VDSS VGSS ID IDM IS IAS EAS DMNH6042SK3 Value 60 ±20 25 17 40 25 3.5 65 Units V V A A A A mJ Thermal Characteristics Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Steady State t<10s Steady State t<10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 2 73 36 3.5 43 21 3.2 -55 to +175 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR Min 60 — — 1.0 — — — — — — — — — — — — — — — — — Typ — — — — 30 45 0.8 492 54 27 3.8 4.2 8.8 1.8 1.8 3.4 1.9 10.1 4.5 12.9 5.4 Max — 1 ±100 3.0 50 65 1.2 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250μA µA VDS = 60V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 6A VGS = 4.5V, ID = 6A V VGS = 0V, IS = 2.6A pF pF VDS = 25V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = 44V, ID = 5.2A nC ns ns VGS = 10V, VDS = 30V, ns RG = 6Ω, ID = 1A ns ns nC IF = 2.6A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to produc.


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