100V N-CHANNEL MOSFET
DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ ...
Description
DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V
ID Max TC = +25°C
34A
32A
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch.
Backlighting Power Management Functions DC-DC Converters
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: V-DFN3333-8 (Type B) Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Below Diagram
Terminals: Finish –NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.03 grams (Approximate)
Top View
Pin 1 S S S G
D D DD
Bottom View
D
Top View Internal Schematic
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMT10H015LCG-7 DMT10H015LCG-13
Case V-DFN3333-8 (Type B) V-DFN3333-8 (Type B)
Packaging 2,000/Tape & Reel 3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/6...
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