SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching B...
SiC04A065T
SILICON CARBIDE
SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-220AC Marking: 04A065T
Benefits
High Frequency Operation Higher System Efficiency Environmental Protection Parallel Device Convenience Hard Switching & High Reliability High Temperature Application
TO-220AC
Unit: inch(mm)
Maximum Ratings
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1)
SYMBOL VRRM VRSM VR
IF(AV)
IFRM
TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC
VALUE 650 650 650 11 6 4 26 23
UNITS V V V A A A A A
February 11,2015-REV.01
Page 1
SiC04A065T
Maximum Ratings
PARAMETER
SYMBOL TEST CONDITIONS
Non-Repetitive Peak Forward Surge Current
TC=25oC
(TP=10mS, Half Sine Wave)
TC=125oC
IFSM
Non-Repetitive Peak Forward Surge Current
TC=25oC
(TP=10uS, Pulse)
Power Dissipation
TC=25oC PD TC=125oC
Operating Junction Temperature
TJ
Storage Temperature
TSTG
Thermal Resistance Junction to Case
RθJC
VALUE 29 24
127
75 25 175 -55 to 175 2
UNITS A A
A
W W oC oC oC/W
Electrical Characteristics
PARAMETER DC Blacking Voltage Forward Voltage Reverse Current To...