SIC04A065ND

SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-263  Marking: 04A065ND Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-263 Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 650 650 650 11 6 4 26 23 UNITS V V V A A A A A June 13,2016-REV.00 Page 1 SiC04A065ND Maximum Ratings PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak Forward Surge Current (TP=10uS, Pulse) Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance Junction to Case SYMBOL IFSM TEST CONDITIONS TC=25oC TC=125oC TC=25oC PD TJ TSTG RθJC TC=25oC TC=125oC VALUE 29 24 127 75 25 175 -55 to 175 2 UNITS A A A W W oC oC oC/W Electrical Characteristics PARAMETER DC Blacking Voltage Forward Voltage Reverse Current Total Capacitive Cha...