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NVATS5A112PLZ Dataheets PDF



Part Number NVATS5A112PLZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVATS5A112PLZ DatasheetNVATS5A112PLZ Datasheet (PDF)

NVATS5A112PLZ Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable  ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Reverse Battery.

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NVATS5A112PLZ Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable  ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C VDSS VGSS ID IDP PD 60 V 20 V 27 A 81 A 48 W Operating Junction and Storage Temperature Tj, Tstg 55 to +175 C Avalanche Energy (Single Pulse) (Note 2) EAS 50 mJ Avalanche Current (Note 3) IAV 13 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10 V, L = 500 H, IAV = 13 A 3 : L ≤ 500 H, Single pulse THERMAL RESISTANCE RATINGS Parameter Junction to Case Steady State (Tc = 25C) Symbol RJC Value 3.1 Unit C/W Junction to Ambient (Note 4) RJA 80.5 Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad. C/W www.onsemi.com VDSS 60 V RDS(on) Max 43 mΩ @ 10 V 59 mΩ @ 4.5 V 63 mΩ @ 4 V ID Max 27 A ELECTRICAL CONNECTION P-Channel 2,4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 4 12 3 ATPAK MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. 0 1 Publication Order Number : NVATS5A112PLZ/D NVATS5A112PLZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V 60 V Zero-Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 1.2 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 13 A 24 S Static Drain to Source On-State Resistance RDS(on) ID = 13 A, VGS = 10 V ID = 7 A, VGS = 4.5 V ID = 3.5 A, VGS = 4 V 33 43 m 42 59 m 45 63 m Input Capacitance Ciss 1,450 pF Output Capacitance Coss VDS = 20 V, f = 1 MHz 155 pF Reverse Transfer Capacitance Crss 125 pF Turn-ON Delay Time td(on) 10 ns Rise Time Turn-OFF Delay Time tr td(off) See Fig.1 80 ns 150 ns Fall Time tf 120 ns Total Gate Charge Qg 33.5 nC Gate to Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 25 A 5.3 nC Gate to Drain “Miller”.


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