Document
NVATS5A112PLZ
Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.
Features Low On-Resistance High Current Capability 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) Pb-Free, Halogen Free and RoHS compliance
Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Tc = 25C
VDSS VGSS ID
IDP
PD
60 V 20 V 27 A 81 A
48 W
Operating Junction and Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
50 mJ
Avalanche Current (Note 3)
IAV
13 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 13 A
3 : L ≤ 500 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol RJC
Value 3.1
Unit C/W
Junction to Ambient (Note 4)
RJA
80.5
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
C/W
www.onsemi.com
VDSS 60 V
RDS(on) Max 43 mΩ @ 10 V
59 mΩ @ 4.5 V
63 mΩ @ 4 V
ID Max 27 A
ELECTRICAL CONNECTION P-Channel
2,4
1 1 : Gate 2 : Drain 3 : Source 4 : Drain
3
4
12 3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. 0
1
Publication Order Number : NVATS5A112PLZ/D
NVATS5A112PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter
Symbol
Conditions
Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2 2.6 V
Forward Transconductance
gFS VDS = 10 V, ID = 13 A
24 S
Static Drain to Source On-State Resistance
RDS(on)
ID = 13 A, VGS = 10 V ID = 7 A, VGS = 4.5 V ID = 3.5 A, VGS = 4 V
33 43 m 42 59 m 45 63 m
Input Capacitance
Ciss
1,450
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
155 pF
Reverse Transfer Capacitance
Crss
125 pF
Turn-ON Delay Time
td(on)
10 ns
Rise Time Turn-OFF Delay Time
tr td(off)
See Fig.1
80 ns 150 ns
Fall Time
tf
120 ns
Total Gate Charge
Qg
33.5 nC
Gate to Source Charge
Qgs VDS = 30 V, VGS = 10 V, ID = 25 A
5.3 nC
Gate to Drain “Miller”.