NVATS5A113PLZ

NVATS5A113PLZ Power MOSFET 60 V, 29.5 mΩ, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C ID IDP PD Value 60 20 38 114 60 Unit V V A A W Operating Junction and Storage Temperature Tj, Tstg 55 to +175 C Avalanche Energy (Single Pulse) (Note 2) EAS 95 mJ Avalanche Current (Note 3) IAV 18 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10 V, L = 500 H, IAV = 18 A 3 : L ≤ 500 H, Single pulse THERMAL RESISTANCE RATINGS Parameter Junction to Case Steady State (Tc = 25C) Symbol RJC Value 2.5 Unit C/W Junction to Ambient (Note 4) RJA 80.1...