CY15B256Q

CY15B256Q 256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM 256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM Features Functional Description ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write-protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 2.5-mA active current at 40 MHz ❐ 150-A standby current ❐ 8-A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Automotive-A temperature: –40 C to +85 C ■ 8-pin small outline integrated circuit (SOIC) package ■ Restriction of hazardous substances (RoHS) compliant The CY15B256Q is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonv...