CY7C1049GN

CY7C1049GN 4-Mbit (512K words × 8 bit) Static RAM 4-Mbit (512K words × 8 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active and standby currents ❐ Active current: ICC = 38 mA typical ❐ Standby current: ISB2 = 6 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 36-pin SOJ and 44-pin TSOP II packages Functional Description CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: ■ The device is deselected (CE HIGH) ■ The control signal OE is de-asserted The logic block diagram is on page 2. Product Portfolio Product CY7C1049GN18 CY7C1049GN30 CY7C1049GN Range Industrial VCC Range (V) 1.65 V–2.2 V 2.2 V–3.6 V 4.5 V–5.5 V Speed (ns) 10/15 15 10 10 Power Dissipation Operating ICC, (mA) f = fmax Typ[1] Max Standby, ISB2 (mA) Typ[1] Max – 40 38 45 6 8 38 45 Notes 1. Typical values are included only for reference and are not guarant...