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AP80SL400AS Dataheets PDF



Part Number AP80SL400AS
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP80SL400AS DatasheetAP80SL400AS Datasheet (PDF)

Advanced Power Electronics Corp. AP80SL400AS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power.

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Advanced Power Electronics Corp. AP80SL400AS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. VDS @ Tj,max. RDS(ON) ID 850V 0.4Ω 12A GD S TO-263(S) Absolute Maximum Ratings . Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 Storage Temperature Range Operating Junction Temperature Range Rating 800 +20 12 7.6 30 50 152 3.12 108 15 -55 to 150 -55 to 150 Units V V A A A V/ns W W mJ V/ns ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Value 0.82 40 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201505201 AP80SL400AS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=5A VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=5A IDSS Drain-Source Leakage Current VDS=640V, VGS=0V IGSS Gate-Source Leakage VGS=+20V, VDS=0V Qg Total Gate Charge ID=11A Qgs Gate-Source Charge VDS=640V Qgd Gate-Drain ("Miller") Charge VGS=10V td(on) Turn-on Delay Time VDD=400V tr Rise Time ID=5A td(off) Turn-off Delay Time RG=7.5Ω tf Fall Time VGS=10V Ciss Input Capacitance VGS=0V Coss Output Capacitance VDS=100V .Crss Reverse Transfer Capacitance f=1.0MHz Rg Gate Resistance Source-Drain Diode f=1.0MHz Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V dI/dt=50A/µs 800 - -V - - 0.4 Ω 2 - 5V - 14 - S - - 100 uA - - +100 nA - 56 90 nC - 16 - nC - 21 - nC - 23 - ns - 23 - ns - 70 - ns - 18 - ns - 2300 3680 pF - 60 - pF - 4 - pF - 4.3 8.6 Ω Min. Typ. Max. Units - 0.8 - V - 350 - ns - 3.1 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 4.Surface mounted on 1 in2 copper pad of FR4 board 5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP80SL400AS ID , Drain Current (A) 16 T C =25 o C 12 8 10V 9.0V 8.0V 7.0V V G =6.0V 4 0 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 10 T C =150 o C 8 6 10V 9.0V 8.0V 7.0V 0.37Ω V G =6.0V 4 2 0 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 440 I D =5A T C =25 o C 420 400 . 380 360 340 2468 V GS Gate-to-Source Voltage (V) 10 Fig 3. On-Resistance v.s. Gate Voltage 8 6 Normalized RDS(ON) 4 I D =5A V G =10V 3 2 1 0 -100 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 2 I D =250uA 1.5 RDS(ON) (mΩ) Normalized VGS(th) IS (A) 4 T j = 150 o C 2 T j = 25 o C 1 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP80SL400AS VGS , Gate to Source Voltage (V) 12 I D =11A V DS =640V 10 8 6 4 2 0 0 20 40 60 Q G , Total Gate Charge (nC) 80 Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 10000 C iss 1000 0.37Ω 100 C oss 10 C rss 1 0.1 0 200 400 600 800 1000 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 100 1 Normalized Thermal Response (Rthjc) Duty facto.


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