Document
Advanced Power Electronics Corp.
AP80SL400AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP80SL400A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
VDS @ Tj,max. RDS(ON) ID
850V 0.4Ω 12A
GD S
TO-263(S)
Absolute Maximum Ratings
.
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt TSTG TJ
Parameter Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 Storage Temperature Range
Operating Junction Temperature Range
Rating 800 +20 12 7.6 30 50 152 3.12 108 15
-55 to 150 -55 to 150
Units V V A A A
V/ns W W mJ V/ns ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value 0.82 40
Units ℃/W ℃/W
Data & specifications subject to change without notice
1 201505201
AP80SL400AS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=5A
IDSS
Drain-Source Leakage Current
VDS=640V, VGS=0V
IGSS Gate-Source Leakage
VGS=+20V, VDS=0V
Qg Total Gate Charge
ID=11A
Qgs Gate-Source Charge
VDS=640V
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
td(on)
Turn-on Delay Time
VDD=400V
tr Rise Time
ID=5A
td(off)
Turn-off Delay Time
RG=7.5Ω
tf Fall Time
VGS=10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=100V
.Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
Source-Drain Diode
f=1.0MHz
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V dI/dt=50A/µs
800 -
-V
- - 0.4 Ω
2 - 5V
- 14 -
S
- - 100 uA - - +100 nA
- 56 90 nC - 16 - nC - 21 - nC - 23 - ns - 23 - ns - 70 - ns - 18 - ns - 2300 3680 pF - 60 - pF - 4 - pF
- 4.3 8.6 Ω
Min. Typ. Max. Units
- 0.8 -
V
- 350 - ns
- 3.1 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75 4.Surface mounted on 1 in2 copper pad of FR4 board 5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP80SL400AS
ID , Drain Current (A)
16
T C =25 o C
12
8
10V 9.0V 8.0V 7.0V V G =6.0V
4
0 0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
10
T C =150 o C
8
6
10V 9.0V 8.0V 7.0V
0.37Ω V G =6.0V
4
2
0 0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
440
I D =5A T C =25 o C
420
400
.
380
360
340 2468
V GS Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
8
6
Normalized RDS(ON)
4
I D =5A V G =10V
3
2
1
0 -100 -50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance v.s. Junction Temperature
150
2
I D =250uA
1.5
RDS(ON) (mΩ)
Normalized VGS(th)
IS (A)
4
T j = 150 o C
2
T j = 25 o C
1 0.5
0 0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of Reverse Diode
1.2
0 -100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP80SL400AS
VGS , Gate to Source Voltage (V)
12
I D =11A V DS =640V
10
8
6
4
2
0 0 20 40 60
Q G , Total Gate Charge (nC)
80
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
10000
C iss
1000
0.37Ω
100
C oss
10
C rss
1
0.1 0
200 400 600 800 1000
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
100 1
Normalized Thermal Response (Rthjc)
Duty facto.