Document
Advanced Power Electronics Corp.
APE6019
SYNCHRONOUS RECTIFIER DRIVER
FEATURES
Offers Efficiency Improvement Over Schottky Diode (Depends on Drive Configuration of the SR). Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction. Operating Frequency up to 400 KHz Synchronize to Transformer Secondary Voltage Waveform.
DESCRIPTION
The fundamental of APE6019 synchronous rectifier (SR) driver IC is based on our U.S. patented methods that utilize the principle of “ prediction ” logic circuit. The IC deliberates previous cycle timing to control the SR in present cycle by “ predictive ” algorithm that makes adjustments to the turn-off time, in order to achieve maximum efficiency and avoid cross-conduction at the same time. Due to this patented technology, APE6019 is suitable for either Forward or Flyback topology.
APPLICATIONS
Servers & Workstations Storage Area Network Power Supplies Telecommunication Converters Embedded Systems Industrial & Commercial Systems Using High Current Processors
TYPICAL APPLICATION
T1
Lp Ls
Lm1
+12Vdc
Rt APE6019 Timing SYNC
Pred
Vdd
VR MOSG-C
Adj GND
Rg C2
SR Mosfet Rs1
Rs2
VOUT
C3
Q1
PACKAGE/ORDERING INFORMATION
APE6019X-HF
Package Type M : SO-8
Halogen Free
Timing 1
Pred VR
2 3
Adj 4
Data and specifications subject to change without notice
( Top View ) APE6019 SO-8
8 SYNC 7 VDD 6 MOSG-C 5 GND
1 201005242
Advanced Power Electronics Corp.
ABSOLUTE MAXIMUM RATINGS (TA=25oC, unless otherwise specified.)
The following ratings designate persistent limits beyond which damage to the device may occur.
APE6019
DC Supply Voltage (VDD) --------------------------------Power Dissipation@TA=85oC (PD) ---------------------
Storage Temperature Range (TST) --------------------
Operating Junction Temperature Range (TJ) -------
Lead Soldering Temperature for 5 sec (TL) --------Thermal Resistance Junction to Case (Rthjc)Note Thermal Resistance Junction to Ambient(Rthja)
16V
0.25W -40 to 150oC -40 to 125oC 260oC 45oC/W
160°C/W
Note. The power dissipation and thermal resistance are evaluated under copper board mounted with free air conditions.
ELECTRICAL SPECIFICATIONS
(TA=25oC, VDD=12V, Freq. =300 KHz, Duty Cycle=50%, unless otherwise specified.)
Parameter
SYM
TEST CONDITION
SUPPLY INPUT
Supply Current
IDD
Supply Voltage Enable Voltage
VDD Vddon
SYNC REFERENCE (SYNC)
SYNC High Threshold SYNC Low Threshold
Vshth Vslth
SYNC Clamp Voltage
Vsync
SYNC Input Current
ISYNC
Voltage Regulator REFERENCE (VR)
No load VSYNC=0V, No load IDD peak < 2A
Isync=3mA
VR Output Current ON TIME DUTY SETUP ( PIN 6 )
IVR
Ton-Time
MOSFET GATE DRIVER (MOSG-C) Output High Voltage Output Low Voltage Source Current Sink Current Propagation Delay Pred Time Rise Time Fall Time
Voh Vol Ioh Iol Td TPred Tr Tf
VCC=12V、IO = 200mA VCC=12V、IO = -200mA CLOAD = 10nF CLOAD = 10nF No load No load No load (Note1) No load (Note1)
Dynamic Protect Dynamic Variable MOSG-C on Time
Dt Ton-min
Pi.