AP9926GM-HF

Advanced Power Electronics Corp. AP9926GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description AP9926 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID D1 G2 S1 20V 30mΩ 6A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 +12 6 4.8 26 2 0.016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501125 AP9926GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions ...