N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2614GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of...
Description
Advanced Power Electronics Corp.
AP2614GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free
S D
D
SOT-26
G
D D
BVDSS RDS(ON) ID
Description
AP2614 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercial-industrial applications.
G
20V 25mΩ 7.2A D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating 20 +12 7.2 5.8 30 2
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201209241
AP2614GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Ga...
Similar Datasheet