AP2623GY

Advanced Power Electronics Corp. AP2623GY Pb Free Plating Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID -30V 170mΩ - 2A D2 S1 D1 SOT-26 G2 S2 G1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -30 ±20 -2 -1.6 -20 1.2 0.01 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 110 Unit ℃/W Data and specifications subject to change without notice 200614041 AP2623GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A VGS=-4...