AP2900EC4

Advanced Power Electronics Corp. AP2900EC4 Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Ultra-small Package Outline ▼ Protection Diode Built-in ▼ RoHS Compliant & Halogen-Free BSSS RSS(ON) IS 24V 22.5mΩ 9A Description AP2900 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application. WLCSP 4 ball 1. 59mm + 0.02mm 0.65mm . 1.59mm ± 0. 02mm Top view 0.6 5m m G2 S2 G1 S1 Bottom view 0.225 mm 0.165mm 0.3mm G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VSSS 24 V VGSS +12 V IS ISM PD@TA=25℃ TSTG TJ Source Current Pulsed Source Current1 Total Power Dissipation3 Storage Temperature Range Junction Temperature 9 60 1.6 -55 to 150 -55 to 150 A A W ℃ ℃ Data and specifications subject to change without notice 1 201502241 AP2900EC4 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)SSS RSS(ON) VGS(off) yfs ISSS IGSS td(on) tr td(off) tf Qg VF(S-S) Source-Source Breakdown Voltage VGS=0V, IS=1mA Static Source-Source On-Resistance2 VGS=4.5V, IS=3A VGS=4V, IS=3A VGS=3.7V, IS=3A Cutoff Voltage Forward Transfer Admittance Zero Gate Voltage Source Curre...