DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2904EC4
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable...
Description
Advanced Power Electronics Corp.
AP2904EC4
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive ▼ Ultra-small Package Outline ▼ Protection Diode Built-in ▼ RoHS Compliant & Halogen-Free
VSSS RSS(ON) IS
24V 38mΩ
6A
Description
AP2904 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application.
WLCSP 4 ball
1. 34mm + 0.02mm
0.65 m m
.
1.34mm ± 0. 02mm
Top view
G2 S2 G1 S1
Bottom view
0.225 mm 0.165mm
0.6 5m m
0.3mm
G1
G2 S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VSSS
24 V
VGSS IS ISM PD@TA=25℃ TSTG TJ
Source Current3 Pulsed Source Current1 Total Power Dissipation3
Storage Temperature Range
Junction Temperature
+12 6 45
1.25 -55 to 150 -55 to 150
V A A W ℃ ℃
Data and specifications subject to change without notice
1 201503131
AP2904EC4
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
V(BR)SSS RSS(ON)
VGS(off) yfs ISSS IGSS td(on) tr td(off) tf Qg VF(S-S)
Source-Source Breakdown Voltage VGS=0V, IS=250uA Static Source-Source On-Resistance2 VGS=4.5V, IS=1A
VGS=4V, IS=1A VGS=3.1V, IS=1A
Cutoff Voltage Forward Transfer Admittance Zero Gate Voltage Source Curr...
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