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AP9434GM-HF Dataheets PDF



Part Number AP9434GM-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9434GM-HF DatasheetAP9434GM-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP9434GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Characteristic D D D D ▼ RoHS Compliant & Halogen-Free SO-8 Description AP9434 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of po.

  AP9434GM-HF   AP9434GM-HF



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Advanced Power Electronics Corp. AP9434GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Characteristic D D D D ▼ RoHS Compliant & Halogen-Free SO-8 Description AP9434 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G SS S BVDSS RDS(ON) ID G 30V 22.5mΩ 8A D S The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 +8 8 6.3 40 2.5 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 50 Unit ℃/W 1 201501122 AP9434GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=4.5V, ID=8A VGS=2.5V, ID=5A VGS=1.8V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=24V, VGS=0V VGS=+8V, VDS=0V ID=8A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=5V VGS=0V VDS=15V f=1.0MHz f=1.0MHz 30 - - V - 17.8 22.5 mΩ - 22.7 30 mΩ - 34 48 mΩ 0.3 0.57 1 V - 25 - S - - 10 uA - - +100 nA - 8 - nC - 1 - nC - 3.5 - nC - 7 - ns - 10 - ns - 18 - ns - 6 - ns - 450 - pF - 90 - pF - 70 - pF - 2 -Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=2.1A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 18 - ns - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING O.


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