Document
Advanced Power Electronics Corp.
AP9434GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Characteristic
D D D
D
▼ RoHS Compliant & Halogen-Free
SO-8
Description
AP9434 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G SS S
BVDSS RDS(ON) ID
G
30V 22.5mΩ
8A D
S
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1
Total Power Dissipation Storage Temperature Range
Operating Junction Temperature Range
30 +8 8 6.3 40 2.5 -55 to 150 -55 to 150
V V A A A W ℃
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 50
Unit ℃/W
1 201501122
AP9434GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=8A
VGS=2.5V, ID=5A
VGS=1.8V, ID=2A
VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=24V, VGS=0V VGS=+8V, VDS=0V ID=8A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=5V
VGS=0V VDS=15V f=1.0MHz f=1.0MHz
30 - - V
- 17.8 22.5 mΩ
- 22.7 30 mΩ
- 34 48 mΩ
0.3 0.57 1 V
- 25 -
S
- - 10 uA
- - +100 nA
- 8 - nC
- 1 - nC
- 3.5 - nC
- 7 - ns
- 10 - ns
- 18 - ns
- 6 - ns
- 450 - pF
- 90 - pF
- 70 - pF
- 2 -Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 18 - ns - 7 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING O.