AP99T03GP-HF

Advanced Power Electronics Corp. AP99T03GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widly preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID G D S 30V 2.5mΩ 200A TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 200 120 120 800 156 2 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.8 62 Units ℃/W ℃/W 1 201006211 AP99T03GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs ID...