UT8Q512K32E

Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 FEATURES  25ns maximum (3.3 volt supply) address access time  MCM contains four (4) 512Kx8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24 or 32-bit data width  TTL compatible inputs and output levels, three-state bidirectional data bus  Typical radiation performance - Total dose: 50krads - SEL Immune >110 MeV-cm2/mg - SEU LETTH(0.25) = >52 MeV-cm2/mg - Saturated Cross Section , 2.8E-8 cm2/bit - <1.1E-9 errors/bit-day, Adams 90% geosynchronous heavy ion  Packaging: - 68-lead dual cavity ceramic quad flatpack (CQFP) (11.0 grams) INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte (16Mbit) CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a common output enable. Memory expansion is provided by an active LOW chip enable (En), an active LOW output enable (G), and three-state drivers. This device has a powerdown feature that reduces power consumption by more than 90% when deselected. Writing to each memory is accomplished by taking chip enable (En) input LOW and write enable (Wn) inputs LOW. Data on the eight I/O pins (DQ0 through DQ7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking chip enable (En) and output enable (G) LOW while forcing write enable (Wn) HIGH. Under these conditions, the...