GV3407

Gem micro semiconductor Inc. GV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -4.3A 60 @ VGS = -10 V,ID=-4.3A 78 @ VGS = -4.5V,ID=-3.0A Features  Super high dense cell trench design for low RDS(on).  Rugged and reliable.  SOT-23-3L package  Ordering information：GV3407（Lead（Pb）-free） GV3407-G（Lead（Pb）-free and halogen-free） 3 GV3407 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin 1: Gate 2: Source 3: Drain Gate 1 2 Drain Source Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RJA RJL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC1,6 Drain Current @TA=70oC1,6 Drain Current (Pulsed) 2 Total Power Dissipation @TA=25oC1 Total Power Dissipation @TA=70oC1 Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient （Steady-State）1 Thermal Resistance Junction to Ambient （t≤10S）1,6 Maximum Junction-to-Lead3 Ratings -30 20 -4.3 -3.5 -20 1.4 0.9 -55 to +150 125 90 80 Units V V A A W C C/W C/W DS-GV3407-REV03-BK16 Page 1 of 4 Gem micro semiconductor Inc. GV3407 Electrical Characteristics (TA=25C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit  Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - -V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V VDS=-30V, VGS=0V, TJ=55oC - - -1 uA - - -5 IGSS Gate-Body Leakage Curren...