AP65PN1R4I POWER MOSFET Datasheet

AP65PN1R4I Datasheet, PDF, Equivalent


Part Number

AP65PN1R4I

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download AP65PN1R4I Datasheet


AP65PN1R4I
Advanced Power
Electronics Corp.
AP65PN1R4I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP65PN1R4 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BVDSS
RDS(ON)
ID3
650V
1.45Ω
7A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
650
+30
7
3.3
20.8
32.9
1.92
13.5
-55 to 150
-55 to 150
V
V
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.8
65
Units
/W
/W
1
201612072

AP65PN1R4I
AP65PN1R4I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=3A
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
IGSS Gate-Source Leakage
VGS=+30V, VDS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
ID=3A
VDS=480V
VGS=10V
VDD=300V
ID=3A
RG=50Ω
VGS=10V
VGS=0V
VDS=100V
.f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=3A, VGS=0V
IS=3A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
650 -
-V
- - 1.45 Ω
2 - 5V
-9-S
- - 100 uA
- - +100 nA
- 32 51 nC
- 8 - nC
- 13 - nC
- 40 - ns
- 40 - ns
- 140 - ns
- 36 - ns
- 1250 2000 pF
- 44 - pF
- 9 - pF
- 1.5 3 Ω
Min. Typ. Max. Units
- - 1.5 V
- 320 - ns
- 1.7 - uC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features Advanced Power Electronics Corp. AP65PN 1R4I Halogen-Free Product N-CHANNEL ENH ANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characte ristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP65PN1R4 series are fr om Advanced Power innovated design and silicon process technology to achieve t he lowest possible onresistance and fas t switching performance. It provides th e designer with an extreme efficient de vice for use in a wide range of power a pplications. The TO-220CFM package is w idely preferred for all commercialindus trial through hole applications. The mo ld compound provides a high isolation v oltage capability and low thermal resis tance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 650V 1.4 5Ω 7A G DS TO-220CFM(I) . Absolute Maximum Ratings@Tj=25oC(unless otherwis e specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100 IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Vol.
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