N-Channel MOSFET
Advanced Power Electronics Corp.
AP70T03GJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resi...
Description
Advanced Power Electronics Corp.
AP70T03GJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted.
BVDSS RDS(ON) ID
30V 9mΩ 60A
GDS
TO-251S(JB)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
30 +20 60 43 195 53 -55 to 175 -55 to 175
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 2.8 110
Units ℃/W ℃/W
1 201505271
AP70T03GJB
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qg...
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