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RHD5900 Dataheets PDF



Part Number RHD5900
Manufacturers Aeroflex Circuit Technology
Logo Aeroflex Circuit Technology
Description Quad Operational Amplifier
Datasheet RHD5900 DatasheetRHD5900 Datasheet (PDF)

Standard Products RadHard-by-Design RHD5900 Quad Operational Amplifier www.aeroflex.com/RHDseries April 8, 2013 FEATURES  Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)  Radiation performance - Total dose: >1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s - ELDRS Immune - SEL Immune - Neutron Displacement Damage >100 MeV-cm2/mg >1014 neutrons/cm2  Rail-to-Rail input and output range  Short Circuit Tolerant  Full military temperature range .

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Standard Products RadHard-by-Design RHD5900 Quad Operational Amplifier www.aeroflex.com/RHDseries April 8, 2013 FEATURES  Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)  Radiation performance - Total dose: >1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s - ELDRS Immune - SEL Immune - Neutron Displacement Damage >100 MeV-cm2/mg >1014 neutrons/cm2  Rail-to-Rail input and output range  Short Circuit Tolerant  Full military temperature range  Designed for aerospace and high reliability space applications  Packaging – Hermetic ceramic SOIC - 16-pin, .411"L x .293"W x .105"Ht - Weight - 0.8 grams max  Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G. GENERAL DESCRIPTION Aeroflex’s RHD5900 is a radiation hardened, single supply, quad operational amplifier in a 16-pin SOIC package. The RHD5900 design uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single event latchup. These characteristics make the RHD5900 especially suited for the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5900 is ideal for demanding military and space applications. ORGANIZATION AND APPLICATION The RHD5900 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated. CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode protected. The devices will not latch with SEU events to above 100 MeV-cm2/mg. Total dose degradation is minimal to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014 neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU effects are application dependent. SCD5900 Rev G VCC +IN_A 3 -IN_A 2 4 A 1 OUT_A +IN_B 5 -IN_B 6 B 7 OUT_B +IN_C 12 -IN_C 11 C 10 OUT_C +IN_D 14 D 16 OUT_D -IN_D 15 13 VEE FIGURE 1: BLOCK DIAGRAM OUT_A -IN_A +IN_A VCC +IN_B -IN_B OUT_B N/C 1 16 2 15 3 14 4 13 RHD5900 5 12 6 11 7 10 89 OUT_D -IN_D +IN_D VEE +IN_C -IN_C OUT_C N/C 16-Pin SOIC FIGURE 2: PACKAGE PIN-OUT Notes: 1. Package and lid are electrically isolated from signal pads. 2. It is recommended that N/C or no connect pins (pins 8 and 9) and lid be grounded. This eliminates or minimizes any ESD or static buildup. SCD5900 Rev G 4/8/13 2 Aeroflex Plainview ABSOLUTE MAXIMUM RATINGS Parameter Range Units Case Operating Temperature Range -55 to +125 °C Storage Temperature Range -65 to +150 °C Junction Temperature +150 °C Supply Voltage VCC - VEE +6.0 V Input Voltage VCC +0.4 VEE -0.4 V Lead Temperature (soldering, 10 seconds) 300 °C Thermal Resistance, Junction to Case,jc 7 °C/W ESD Rating (MIL-STD-883, Method 3015, class 2) 2,000 - 3,999 V Power @25°C 200 mW NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rating only; functional operation beyond the “Operation Conditions” is not recommended and extended exposure beyond the “Operation Conditions” may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol +VCC VCM Power Supply Voltage Input Common Mode Range Parameter Typical 3.3 to 5.0 VCC to VEE ELECTRICAL PERFORMANCE CHARACTERISTICS (TC = -55°C TO +125°C, +VCC = +5.0V -- UNLESS OTHERWISE SPECIFIED) Parameter Symbol Conditions Min Quiescent Supply Current 1/ ICCQ No Load Input Offset Voltage 1/ VOS -3 Input Offset Current 1/ IOS -100 Input Bias Current TC = +25°C, -55°C 1/ IB TC = +125°C -100 -1000 Common Mode Rejection Ratio CMRR 70 Power Supply Rejection Ratio PSRR 70 Output Voltage High VOH ROUT=3.6K to GND 4.9 Output Voltage Low VOL ROUT=3.6K to VCC Short Circuit Output Current 2/ IO(SINK) IO(SOURCE) VOUT to VCC VOUT to VEE -30 45 Slew Rate 1/ SR RL = 8K, Gain = 1 2.0 Open Loop Gain 1/ AOL No Load 90 Unity Gain Bandwidth 1/ UGBW RL = 10K 4 Channel Separation 2/ RL = 2K, f = 1.0KHz 84 Input-Referred Voltage Noise 2/ en F = 5 kHz Phase Margin 2/ m TC 25 °C, No Load 30 Notes: 1/ Specification derated to reflect Total Dose exposure to 1 Mrad(Si) @ +25°C. 2/ Not Tested. Shall be guaranteed by design, characterization, or correlation to other test parameters. Typ 4.7 0.80 10 10 100 90 90 3.3 100 6.5 15 Max 5.5 3 100 100 1000 0.1 -75 55 Units V V Units mA mV pA pA dB dB V V mA mA V.


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