Document
Standard Products
RadHard-by-Design RHD5900 Quad Operational Amplifier
www.aeroflex.com/RHDseries April 8, 2013
FEATURES
Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune - SEL Immune - Neutron Displacement Damage
>100 MeV-cm2/mg >1014 neutrons/cm2
Rail-to-Rail input and output range
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC - 16-pin, .411"L x .293"W x .105"Ht - Weight - 0.8 grams max
Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
Aeroflex’s RHD5900 is a radiation hardened, single supply, quad operational amplifier in a 16-pin SOIC package. The RHD5900 design uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single event latchup. These characteristics make the RHD5900 especially suited for the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5900 is ideal for demanding military and space applications.
ORGANIZATION AND APPLICATION
The RHD5900 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated. CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode protected.
The devices will not latch with SEU events to above 100 MeV-cm2/mg. Total dose degradation is minimal to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014 neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU effects are application dependent.
SCD5900 Rev G
VCC
+IN_A 3 -IN_A 2
4 A
1 OUT_A
+IN_B 5 -IN_B 6
B
7 OUT_B
+IN_C 12 -IN_C 11
C
10 OUT_C
+IN_D 14 D
16 OUT_D
-IN_D 15
13
VEE
FIGURE 1: BLOCK DIAGRAM
OUT_A -IN_A +IN_A VCC +IN_B -IN_B
OUT_B N/C
1 16 2 15 3 14 4 13
RHD5900
5 12 6 11 7 10 89
OUT_D -IN_D +IN_D VEE +IN_C -IN_C OUT_C N/C
16-Pin SOIC
FIGURE 2: PACKAGE PIN-OUT
Notes: 1. Package and lid are electrically isolated from signal pads. 2. It is recommended that N/C or no connect pins (pins 8 and 9) and lid be grounded. This eliminates or minimizes any ESD or static buildup.
SCD5900 Rev G 4/8/13
2
Aeroflex Plainview
ABSOLUTE MAXIMUM RATINGS
Parameter
Range
Units
Case Operating Temperature Range
-55 to +125
°C
Storage Temperature Range
-65 to +150
°C
Junction Temperature
+150
°C
Supply Voltage VCC - VEE
+6.0 V
Input Voltage
VCC +0.4 VEE -0.4
V
Lead Temperature (soldering, 10 seconds)
300 °C
Thermal Resistance, Junction to Case,jc
7 °C/W
ESD Rating (MIL-STD-883, Method 3015, class 2)
2,000 - 3,999
V
Power @25°C
200 mW
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rating only; functional operation beyond the “Operation Conditions” is not recommended and extended exposure beyond the “Operation Conditions” may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
+VCC VCM
Power Supply Voltage Input Common Mode Range
Parameter
Typical
3.3 to 5.0 VCC to VEE
ELECTRICAL PERFORMANCE CHARACTERISTICS
(TC = -55°C TO +125°C, +VCC = +5.0V -- UNLESS OTHERWISE SPECIFIED)
Parameter
Symbol
Conditions
Min
Quiescent Supply Current 1/
ICCQ
No Load
Input Offset Voltage 1/
VOS
-3
Input Offset Current 1/
IOS
-100
Input Bias Current
TC = +25°C, -55°C 1/ IB
TC = +125°C
-100 -1000
Common Mode Rejection Ratio
CMRR
70
Power Supply Rejection Ratio
PSRR
70
Output Voltage High
VOH ROUT=3.6K to GND
4.9
Output Voltage Low
VOL ROUT=3.6K to VCC
Short Circuit Output Current 2/
IO(SINK) IO(SOURCE)
VOUT to VCC VOUT to VEE
-30 45
Slew Rate 1/
SR RL = 8K, Gain = 1
2.0
Open Loop Gain 1/
AOL No Load
90
Unity Gain Bandwidth 1/
UGBW
RL = 10K
4
Channel Separation 2/
RL = 2K, f = 1.0KHz
84
Input-Referred Voltage Noise 2/ en F = 5 kHz
Phase Margin 2/
m TC 25 °C, No Load
30
Notes: 1/ Specification derated to reflect Total Dose exposure to 1 Mrad(Si) @ +25°C. 2/ Not Tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
Typ 4.7 0.80 10 10 100 90 90
3.3 100 6.5
15
Max 5.5 3 100 100 1000
0.1 -75 55
Units V V
Units mA mV pA
pA
dB dB V V mA mA V.