N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp.
AP75T10GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple ...
Description
Advanced Power Electronics Corp.
AP75T10GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications.
BVDSS RDS(ON) ID
G D S
100V 15mΩ
65A
TO-220(P)
GD S
TO-263(S)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
100 +20 65 41 260 138 1.11
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 0.9 40 62
Units ℃/W ℃/W ℃/W
1 201411055
AP75T10GS/P-HF
Electrical...
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