AP80N03GP-HF

Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 8mΩ ▼ Simple Drive Requirement G ID ▼ RoHS Compliant & Halogen-Free S 80A Description AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-220(P) The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP80N03P) are available for low-profile applications. GD S TO-263(S) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 30 V +20 V ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 80 50 315 83.3 -55 to 150 -55 to 150 A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & ...